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Design and implement innovative SiC epitaxial processes on an industrial hot-wall CVD system, focusing on achieving exceptional dopant and thickness uniformity, as well as minimal extended defect density on 6- and 8-inch SiC substrates.
Perform metrology and characterization of SiC epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
Conduct optical and photoluminescence inspections of extended defects in SiC epilayers, including critical defects such as micropipes, carro...
About the Role
We're seeking a talented and passionate Process Engineer/Senior Process Engineer to join our epitaxy team, Advanced Process Modules (APM). The successful candidate will be responsible for SiC epitaxy process development for next-generation power devices. This position is within the National Semiconductor Translation and Innovation Centre (NSTIC) ? Power Electronics.
Responsibilities:
Design and implement innovative SiC epitaxial processes on an industrial hot-wall CVD system, focusing on achieving exceptional dopant and thickness uniformity, as well as minimal extended defect density on 6- and 8-inch SiC substrates.
Perform metrology and characterization of SiC epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
Conduct optical and photoluminescence inspections of extended defects in SiC epilayers, including critical defects such as micropipes, carro...
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